首页» 研究成果» 发表文章» 2015
2015

 

Exploring Atomic Defects in Molybdenum Disulphide Monolayers

JH Hong, ZX Hu, M Probert, K Li, DH Lv, XA Yang, L Gu, NN Mao, QL Feng, LM Xie, J Zhang, DZ Wu, ZY Zhang, CH Jin*, W Ji*, XX Zhang, J Yuan*, Z Zhang, Nature Commun. 2015, 6, 6293. 

ABSTRACT: Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment–theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.51013 cm2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

5.Exploring Atomic Defects in Molybdenum Disulphide Monolayers.pdf

Copyright(c)版权所有 公司纳米化学研究中心 北京市海淀区成府路202号 澳门游戏网站大全(中国)有限公司A区4层 100871 010-62757157
最后更新日期:201828 网站统计: